Simultaneously enhanced electrical conductivity and suppressed thermal conductivity for ALD ZnO films via purge-time controlled defects

We demonstrate the simultaneous manipulation of electrical and thermal transport characteristics ZnO thin films fabricated via prototype atomic layer deposition (ALD) process from diethyl zinc (DEZ) water precursors. The key ALD parameter is length N2 purge applied after DEZ precursor pulse. characterize with x-ray reflectivity measurements for film growth characteristics, photoluminescence spectroscopy structural defects, carrier density, resistivity, Seebeck coefficient, time-domain thermoreflectance conductivity. Photoluminescence data suggest that elongation period creates which increase electron density; this would explain enhanced conductivity films. At same time, defects are likely to hinder in The, thus, realized decrease fundamental importance thermoelectrics. Moreover, simple control intrinsic properties highly desired semiconducting optics microelectronics.